KU PA 200270-10 B, GaN-HEMT Power Amplifier
Based on GaN HEMT technology, the amplifier module achieves energy efficiencies greater than 40% over the entire 2000-2700MHz bandwidth at 10W output power.
net: 899,00 €
incl. 19% Vat. plus shipping
Lead time on request
|Frequency range||2000..2700 MHz|
|Maximum input power||+30 dBm|
|Output power P3dB||40 dBm (min.) (CW)|
|10 W (min.) (CW)|
|Gain (small signal)||47.5 dB (typ.)|
|Gain flatness (small signal)||+/-0.75 dB (typ.)|
|Noise figure @ 18 °C||1.5 dB (typ.)|
|Harmonic rejection||40 dB (typ.)|
|Over temperature protection||yes|
|IM3 (2)||30 dBc (typ.) @ 40 dBm PEP|
|Efficiency||40 % (typ.) @ P3dB|
|Input return loss (S11)||13 dB (typ.)|
|ON voltage||+3 ... +50 V DC|
|Supply voltage||+10 ... 50 V DC|
|Quiescent current||160mA (typ.) @ 28V DC|
|Current consumption||3 A (max.) @ 10V DC|
|Forward detection||yes (log. detector)|
|Reflected power detection||yes (log. detector)|
|VSWR of load||infinite|
|Operating case temp. range||-20 ... +80 °C|
|Input connector / impedance||SMA-female / 50 ohms|
|Output connector / impedance||SMA-female / 50 ohms|
|Dimensions (mm)||85 X 85 X 40|
|Weight||500 g (typ.)|
DescriptionBased on GaN HEMT technology, the amplifier module achieves energy efficiencies greater than 40% over the entire 2000-2700MHz bandwidth at 10W output power. The amplifier is temperature compensated and, despite its high gain (47dB), features a very low gain ripple of typically +/- 0.5dB across the full bandwidth.
The high efficiency in combination with an extended operating temperature range of -20 ... + 80°C allows the use of the amplifier module even under suboptimal cooling conditions. An overtemperature shutdown at +80°C (with automatic restart) protects the module from overheating.
The RF output tolerates arbitrary mismatch without causing instability or damage.
In addition to the standard version with + 28V operating voltage (version A), the amplifier module is also available with wide-range supply voltage input (version B, +10 ... + 50V operating voltage).
The module provides low-impedance monitoring outputs for measurement and monitoring of forward and backward power as well as operating temperature. Power supply, control and monitoring signals are provided via a robust I/O interface (9-pin Sub-D connector) with protection against reverse polarity, overvoltage and EMI.
- High efficiency and bandwidth
- Very low ripple, noise figure and good harmonic rejection over the entire bandwidth
- Robust I/O interface via Sub-D connector with monitoring outputs for forward and backward power as well as temperature
- Extended operating temperature range -20 ... + 80 ° C
- Available with wide-range supply voltage input +10 ... 50V (version B)
- Plasma generation and microwave heating in process engineering and scientific applications
- RF Measurement setups, EMC testing
- Analog & Digital Transmission Systems