The amplifier features high gain (37dB) and a gain ripple of typically +/- 2dB across the full bandwidth.
The module provides a monitoring output for monitoring of forward power. The power supply input features protection against reverse polarity and overvoltage.
Technical specifications
Frequency range | 2700..3300 MHz |
Maximum input power | +10 dBm |
Output power P3dB | min. 40 dBm (CW) |
min. 10 W (CW) | |
Gain (small signal) | typ. 40 dB, min. 37 dB |
Gain flatness (small signal) | typ. +/- 2 dB |
Harmonic rejection | typ. 22 dB @ 40 dBm |
Efficiency | typ. 48 % @ 40 dBm (CW) |
ON voltage | +5 ... 14 V DC |
Supply voltage | +27 ... 29 V DC |
Quiescent current | typ. 300 mA |
Forward detection | yes (diode detector) |
Operating case temp. range | -20 ... +55 °C |
Input connector / impedance | SMA-female / 50 ohms |
Output connector / impedance | SMA-female / 50 ohms |
Case | milled aluminium |
Dimensions (mm) | 78 x 41 x 22 mm |
Weight | 120 g (typ.) |
Description
Based on GaN HEMT technology, the amplifier module achieves typical energy efficiencies of 48% over the entire 2700-3300MHz bandwidth at 10W output power.The amplifier features high gain (37dB) and a gain ripple of typically +/- 2dB across the full bandwidth.
The module provides a monitoring output for monitoring of forward power. The power supply input features protection against reverse polarity and overvoltage.
Features
- GaN technology
- High efficiency
- Reverse polarity protection
- Monitor output for forward power detection (DC voltage)
- Logic ON / OFF control (ON at +5 … 14 V DC)
Applications
- Measurement, Laboratory equipment
Important notes
- The technical specifications refer to room temperature.
- The power amplifier doesn’t contain any coaxial relays.
- The recommended combination of heat sink and fan(s) is only specified for an ambient temperature of 25 °C.
- Further information about dimensioning of heat sinks is available on our FAQ site.